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UMX2N from ROHM

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UMX2N

Manufacturer: ROHM

General purpose (dual transistors)

Partnumber Manufacturer Quantity Availability
UMX2N ROHM 99540 In Stock

Description and Introduction

General purpose (dual transistors) The UMX2N is a transistor manufactured by ROHM. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** NPN Silicon Epitaxial Planar Transistor  
- **Package:** SOT-363 (UMT3)  
- **Collector-Base Voltage (VCBO):** 50V  
- **Collector-Emitter Voltage (VCEO):** 50V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 100mA  
- **Total Power Dissipation (PT):** 150mW  
- **Junction Temperature (Tj):** 150°C  
- **Storage Temperature (Tstg):** -55°C to +150°C  

### **Descriptions:**  
- Designed for high-speed switching and amplification applications.  
- Compact and lightweight due to the small SOT-363 package.  

### **Features:**  
- **Low saturation voltage** for efficient switching.  
- **High current gain (hFE)** for improved amplification.  
- **Miniature package (SOT-363)** suitable for space-constrained designs.  
- **Pb-free and RoHS compliant.**  

This information is based on ROHM's official documentation for the UMX2N transistor.

Partnumber Manufacturer Quantity Availability
UMX2N ROHM 150275 In Stock

Description and Introduction

General purpose (dual transistors) Here are the factual details about the **UMX2N** manufacturer **ROHM** from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** ROHM Semiconductor  
- **Part Number:** UMX2N  
- **Type:** N-channel MOSFET  
- **Package:** SOT-323 (SC-70)  
- **Drain-Source Voltage (VDS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Drain Current (ID):** 1.2A  
- **Power Dissipation (PD):** 0.3W  
- **On-Resistance (RDS(on)):** 0.25Ω (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.6V (typ)  

### **Descriptions:**
- The **UMX2N** is a small-signal N-channel MOSFET designed for switching applications.  
- It is optimized for low-voltage, high-efficiency circuits.  
- Suitable for portable devices, power management, and load switching.  

### **Features:**
- **Low On-Resistance (RDS(on))** for reduced power loss.  
- **Compact SOT-323 Package** for space-saving designs.  
- **Fast Switching Speed** for efficient operation.  
- **Low Threshold Voltage** for compatibility with low-voltage logic.  

This information is based on ROHM's official documentation for the UMX2N MOSFET.

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