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UMN1N from ROHM

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UMN1N

Manufacturer: ROHM

0.025A , 80V Plastic-Encapsulated Switching Diode

Partnumber Manufacturer Quantity Availability
UMN1N ROHM 9000 In Stock

Description and Introduction

0.025A , 80V Plastic-Encapsulated Switching Diode Here are the factual details about part **UMN1N** from manufacturer **ROHM** based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Part Number:** UMN1N  
- **Manufacturer:** ROHM Semiconductor  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 1A  
- **Power Dissipation (PD):** 1W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(ON)):** 3.5Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) – 2.5V (max)  
- **Package:** SOT-23  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for efficient power switching.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Compact SOT-23 Package:** Space-saving design for portable and compact devices.  
- **Low Threshold Voltage:** Ensures compatibility with low-voltage control circuits.  
- **Applications:** Power management, load switching, DC-DC converters, and battery protection circuits.  

This information is strictly from the provided knowledge base. Let me know if you need further details.

Partnumber Manufacturer Quantity Availability
UMN1N DIODES 2218 In Stock

Description and Introduction

0.025A , 80V Plastic-Encapsulated Switching Diode The part **UMN1N** is manufactured by **DIODES**. Below are the specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** N-Channel Enhancement Mode MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** 1.3A  
- **Power Dissipation (PD):** 0.7W  
- **On-Resistance (RDS(on)):** 0.5Ω (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.7V (min), 1.5V (max)  
- **Package:** SOT-23  

### **Descriptions:**  
The **UMN1N** is a small-signal N-Channel MOSFET designed for low-voltage, high-speed switching applications. It is suitable for power management, load switching, and amplification in portable and battery-powered devices.  

### **Features:**  
- Low threshold voltage for compatibility with logic-level signals  
- Low on-resistance for efficient power handling  
- Fast switching speed  
- Compact SOT-23 package for space-constrained applications  
- RoHS compliant  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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