IC Phoenix logo

Home ›  U  › U16 > UMN1N

UMN1N from ROHM

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

UMN1N

Manufacturer: ROHM

0.025A , 80V Plastic-Encapsulated Switching Diode

Partnumber Manufacturer Quantity Availability
UMN1N ROHM 9000 In Stock

Description and Introduction

0.025A , 80V Plastic-Encapsulated Switching Diode Here are the factual details about part **UMN1N** from manufacturer **ROHM** based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Part Number:** UMN1N  
- **Manufacturer:** ROHM Semiconductor  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 1A  
- **Power Dissipation (PD):** 1W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(ON)):** 3.5Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) – 2.5V (max)  
- **Package:** SOT-23  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for efficient power switching.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Compact SOT-23 Package:** Space-saving design for portable and compact devices.  
- **Low Threshold Voltage:** Ensures compatibility with low-voltage control circuits.  
- **Applications:** Power management, load switching, DC-DC converters, and battery protection circuits.  

This information is strictly from the provided knowledge base. Let me know if you need further details.

Application Scenarios & Design Considerations

0.025A , 80V Plastic-Encapsulated Switching Diode
Partnumber Manufacturer Quantity Availability
UMN1N DIODES 2218 In Stock

Description and Introduction

0.025A , 80V Plastic-Encapsulated Switching Diode The part **UMN1N** is manufactured by **DIODES**. Below are the specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** N-Channel Enhancement Mode MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** 1.3A  
- **Power Dissipation (PD):** 0.7W  
- **On-Resistance (RDS(on)):** 0.5Ω (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.7V (min), 1.5V (max)  
- **Package:** SOT-23  

### **Descriptions:**  
The **UMN1N** is a small-signal N-Channel MOSFET designed for low-voltage, high-speed switching applications. It is suitable for power management, load switching, and amplification in portable and battery-powered devices.  

### **Features:**  
- Low threshold voltage for compatibility with logic-level signals  
- Low on-resistance for efficient power handling  
- Fast switching speed  
- Compact SOT-23 package for space-constrained applications  
- RoHS compliant  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

0.025A , 80V Plastic-Encapsulated Switching Diode

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips