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UMH2N from ROHM

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UMH2N

Manufacturer: ROHM

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Partnumber Manufacturer Quantity Availability
UMH2N ROHM 90000 In Stock

Description and Introduction

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) The part **UMH2N** is manufactured by **ROHM**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** NPN Bipolar Transistor  
- **Package:** TO-92  
- **Maximum Collector-Base Voltage (VCB):** 50V  
- **Maximum Collector-Emitter Voltage (VCE):** 50V  
- **Maximum Emitter-Base Voltage (VEB):** 5V  
- **Maximum Collector Current (IC):** 500mA  
- **Total Power Dissipation (PD):** 500mW  
- **DC Current Gain (hFE):** 100 to 400  
- **Transition Frequency (fT):** 200MHz  

### **Description:**  
The **UMH2N** is a general-purpose NPN bipolar transistor designed for amplification and switching applications. It is housed in a **TO-92** package, making it suitable for through-hole PCB mounting.  

### **Features:**  
- High current gain (hFE) range  
- Low saturation voltage  
- High-speed switching capability  
- Suitable for small-signal amplification  

This information is based on ROHM's official documentation for the **UMH2N** transistor.

Partnumber Manufacturer Quantity Availability
UMH2N DIODES 2045 In Stock

Description and Introduction

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) The part **UMH2N** is manufactured by **DIODES**.  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-363 (SC-88)  
- **Collector-Base Voltage (VCBO):** 50V  
- **Collector-Emitter Voltage (VCEO):** 50V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 200mA  
- **Power Dissipation (PD):** 200mW  
- **DC Current Gain (hFE):** 100 to 400 (at IC = 10mA, VCE = 5V)  
- **Transition Frequency (fT):** 250MHz  

### **Descriptions:**  
The UMH2N is a high-voltage NPN transistor in a small SOT-363 package, designed for general-purpose amplification and switching applications.  

### **Features:**  
- High current gain (hFE)  
- Low saturation voltage  
- High transition frequency (fT)  
- Compact SOT-363 package for space-saving designs  
- Suitable for high-speed switching and amplification circuits  

This information is based on the manufacturer's datasheet. For detailed electrical characteristics, refer to the official documentation.

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