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UMG9NTR from ROHM

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UMG9NTR

Manufacturer: ROHM

EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Partnumber Manufacturer Quantity Availability
UMG9NTR ROHM 12000 In Stock

Description and Introduction

EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Here are the factual details about part UMG9NTR from manufacturer ROHM:  

### **Specifications:**  
- **Part Number:** UMG9NTR  
- **Manufacturer:** ROHM Semiconductor  
- **Type:** N-channel MOSFET  
- **Package:** SSOP5 (Super Small Outline Package, 5-pin)  
- **Drain-Source Voltage (VDSS):** 30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Drain Current (ID):** 5A (continuous)  
- **On-Resistance (RDS(on)):** 28mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 2W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Compact Package:** SSOP5 form factor for space-constrained designs.  
- **Logic Level Drive:** Can be driven by low-voltage control signals.  
- **Applications:** Power management in portable devices, DC-DC converters, load switches, and motor control.  

For exact performance characteristics, refer to the official ROHM datasheet.

Partnumber Manufacturer Quantity Availability
UMG9NTR 20 In Stock

Description and Introduction

EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) The part **UMG9NTR** is a **MOSFET** (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by **STMicroelectronics**. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
STMicroelectronics  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 9A  
- **Pulsed Drain Current (IDM):** 36A  
- **Power Dissipation (PD):** 30W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.045Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Input Capacitance (Ciss):** 580pF  
- **Output Capacitance (Coss):** 150pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Turn-Off Delay Time (td(off)):** 30ns  
- **Operating Temperature Range:** -55°C to +175°C  

### **Package:**  
- **TO-252 (DPAK)** – Surface-mount package with good thermal performance  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching performance  
- Improved avalanche ruggedness  
- Suitable for high-efficiency power management applications  
- Lead-free and RoHS compliant  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power supplies  
- Battery management systems  
- Load switching  

This information is based on the manufacturer's datasheet for **UMG9NTR**. For detailed electrical characteristics and application notes, refer to STMicroelectronics' official documentation.

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