Power management (dual transistors) The UMF22N is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ROHM Semiconductor. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** ROHM Semiconductor
- **Part Number:** UMF22N
- **Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 60V
- **Continuous Drain Current (ID):** 22A
- **Pulsed Drain Current (IDM):** 88A
- **Power Dissipation (PD):** 50W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.022Ω (typical) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 1.0V to 2.5V
- **Input Capacitance (Ciss):** 1800pF (typical)
- **Output Capacitance (Coss):** 500pF (typical)
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-252 (DPAK)
### **Description:**
The UMF22N is a high-performance N-channel power MOSFET designed for switching applications. It features low on-resistance and high-speed switching, making it suitable for power management in various electronic circuits, including DC-DC converters, motor drivers, and power supplies.
### **Features:**
- **Low On-Resistance (RDS(on)):** Ensures minimal conduction losses.
- **High Current Capability:** Supports up to 22A continuous drain current.
- **Fast Switching Speed:** Optimized for high-frequency applications.
- **Low Gate Charge:** Enhances efficiency in switching applications.
- **Avalanche Energy Rated:** Provides robustness in harsh conditions.
- **Compact Package (TO-252):** Suitable for space-constrained designs.
This information is based on ROHM's official datasheet for the UMF22N MOSFET. For detailed application notes and performance curves, refer to the manufacturer's documentation.
