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UMD6N from DIODES

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UMD6N

Manufacturer: DIODES

NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)

Partnumber Manufacturer Quantity Availability
UMD6N DIODES 2564 In Stock

Description and Introduction

NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) The UMD6N is a Schottky Rectifier manufactured by DIODES. Here are its specifications, descriptions, and features:

### **Specifications:**
- **Voltage Rating (V_RRM):** 60V  
- **Average Forward Current (I_F(AV)):** 6A  
- **Peak Forward Surge Current (I_FSM):** 150A  
- **Forward Voltage Drop (V_F):** 0.55V (typical at 6A)  
- **Reverse Leakage Current (I_R):** 0.5mA (typical at 60V)  
- **Operating Junction Temperature (T_J):** -65°C to +125°C  
- **Storage Temperature (T_STG):** -65°C to +150°C  

### **Description:**
The UMD6N is a Schottky barrier rectifier designed for high-efficiency, low-power loss applications. It is optimized for switching power supplies, DC-DC converters, and reverse polarity protection circuits.

### **Features:**
- **Low Forward Voltage Drop** – Enhances efficiency in power applications.  
- **High Surge Current Capability** – Withstands high transient currents.  
- **Fast Switching Speed** – Reduces switching losses in high-frequency circuits.  
- **Guard Ring for Enhanced Reliability** – Protects against reverse voltage spikes.  
- **Pb-Free and RoHS Compliant** – Environmentally friendly.  

The device is available in a **SMB (DO-214AA)** surface-mount package.  

For detailed electrical characteristics and mechanical dimensions, refer to the official datasheet from DIODES.

Application Scenarios & Design Considerations

NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)
Partnumber Manufacturer Quantity Availability
UMD6N ROHM 6000 In Stock

Description and Introduction

NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) **Manufacturer:** ROHM  
**Part Number:** UMD6N  

### **Specifications:**  
- **Type:** N-channel MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 6A  
- **Power Dissipation (PD):** 30W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.06Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) - 2.5V (max)  
- **Input Capacitance (Ciss):** 600pF (typ)  
- **Package:** TO-252 (DPAK)  

### **Descriptions and Features:**  
- Low on-resistance for high efficiency.  
- Fast switching performance.  
- Suitable for power management applications.  
- Lead-free and RoHS compliant.  
- Used in DC-DC converters, motor control, and power switching circuits.  

(Note: Verify datasheet for exact values as specifications may vary.)

Application Scenarios & Design Considerations

NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)

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