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UMB9N from ROHM

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UMB9N

Manufacturer: ROHM

General purpose dual digital transistors

Partnumber Manufacturer Quantity Availability
UMB9N ROHM 435520 In Stock

Description and Introduction

General purpose dual digital transistors Here are the factual details about part **UMB9N** from manufacturer **ROHM**:

### **Specifications:**
1. **Type:** Schottky Barrier Diode
2. **Maximum Reverse Voltage (VR):** 40V  
3. **Average Rectified Current (IO):** 0.5A  
4. **Peak Forward Surge Current (IFSM):** 20A  
5. **Forward Voltage (VF):** 0.55V (at 0.5A)  
6. **Reverse Current (IR):** 0.1µA (at 40V)  
7. **Operating Temperature Range:** -55°C to +150°C  
8. **Package:** SOD-323 (Miniature Surface Mount)  

### **Descriptions:**
- **UMB9N** is a Schottky barrier diode designed for high-speed switching applications.  
- It features low forward voltage and fast switching characteristics, making it suitable for power supply circuits and reverse current protection.  

### **Features:**
- **Low forward voltage drop** for improved efficiency.  
- **High-speed switching** performance.  
- **Compact SOD-323 package** for space-saving PCB designs.  
- **High reliability** with stable operation over a wide temperature range.  

These details are based on ROHM's official specifications for the **UMB9N** diode.

Application Scenarios & Design Considerations

General purpose dual digital transistors
Partnumber Manufacturer Quantity Availability
UMB9N ROHM 5214 In Stock

Description and Introduction

General purpose dual digital transistors Here are the factual details about part UMB9N from the manufacturer ROHM:

### **Specifications:**
- **Manufacturer:** ROHM  
- **Part Number:** UMB9N  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23  
- **Collector-Emitter Voltage (VCEO):** 50V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (Pd):** 200mW  
- **DC Current Gain (hFE):** 100 to 400 (at IC = 2mA, VCE = 5V)  
- **Transition Frequency (fT):** 250MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**
- The UMB9N is a small-signal NPN transistor designed for general-purpose amplification and switching applications.  
- It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.  

### **Features:**  
- **High Voltage Capability:** Supports up to 50V VCEO.  
- **Low Saturation Voltage:** Ensures efficient switching performance.  
- **High DC Current Gain (hFE):** Provides good amplification characteristics.  
- **Compact Package:** SOT-23 for PCB space savings.  
- **Wide Operating Temperature Range:** Suitable for various environmental conditions.  

This information is based on ROHM's official datasheet for the UMB9N transistor.

Application Scenarios & Design Considerations

General purpose dual digital transistors

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