IC Phoenix logo

Home ›  T  › T83 > TS25P06G

TS25P06G from SAMPLE

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

15.625ms

TS25P06G

Manufacturer: SAMPLE

Single Phase 25.0 AMPS. Glass Passivated Bridge Rectifiers

Partnumber Manufacturer Quantity Availability
TS25P06G SAMPLE 50 In Stock

Description and Introduction

Single Phase 25.0 AMPS. Glass Passivated Bridge Rectifiers The TS25P06G is a P-channel MOSFET manufactured by SAMPLE. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -60V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -25A  
- **Pulsed Drain Current (IDM):** -100A  
- **Power Dissipation (PD):** 75W  
- **On-Resistance (RDS(on)):** 25mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- The TS25P06G is a P-channel enhancement-mode power MOSFET designed for high-efficiency switching applications.  
- It is suitable for power management in DC-DC converters, motor control, and battery protection circuits.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Improved avalanche energy capability.  
- Lead-free and RoHS compliant.  

This information is based solely on the provided knowledge base.

Partnumber Manufacturer Quantity Availability
TS25P06G TSC 6000 In Stock

Description and Introduction

Single Phase 25.0 AMPS. Glass Passivated Bridge Rectifiers The TS25P06G is a P-Channel MOSFET manufactured by TSC (Taiwan Semiconductor). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -60V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Drain Current (ID):** -25A  
- **Power Dissipation (PD):** 75W  
- **RDS(ON) (Max):** 45mΩ @ VGS = -10V  
- **RDS(ON) (Max):** 55mΩ @ VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- The TS25P06G is a P-Channel enhancement mode MOSFET designed for high-efficiency power management applications.  
- It is suitable for switching and amplification in various electronic circuits.  

### **Features:**  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Fast switching performance.  
- High power dissipation capability.  
- RoHS compliant.  

For detailed application notes or additional parameters, refer to the official TSC datasheet.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips