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TS20P06G

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

Partnumber Manufacturer Quantity Availability
TS20P06G 12 In Stock

Description and Introduction

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers The TS20P06G is a P-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor (TSMC). Here are its specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** -60V  
- **Continuous Drain Current (ID):** -20A  
- **Pulsed Drain Current (IDM):** -80A  
- **Power Dissipation (PD):** 75W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 0.06Ω (at VGS = -10V, ID = -10A)  
  - 0.08Ω (at VGS = -4.5V, ID = -10A)  
- **Threshold Voltage (VGS(th)):** -2V to -4V  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**
The TS20P06G is a high-performance P-channel MOSFET designed for power management applications. It features low on-resistance and fast switching, making it suitable for DC-DC converters, motor control, and power switching circuits.  

### **Features:**
- **Low On-Resistance:** Enhances efficiency in power applications.  
- **Fast Switching Speed:** Improves performance in high-frequency circuits.  
- **High Current Handling:** Supports up to -20A continuous drain current.  
- **Avalanche Energy Specified:** Ensures robustness in inductive load conditions.  
- **TO-220 Package:** Provides good thermal dissipation.  

The information is sourced from the manufacturer’s datasheet.

Partnumber Manufacturer Quantity Availability
TS20P06G TSC 1050 In Stock

Description and Introduction

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers The TS20P06G is a P-channel MOSFET manufactured by TSC (Taiwan Semiconductor). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -6A  
- **Pulsed Drain Current (IDM):** -24A  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **On-Resistance (RDS(on)):**  
  - 50mΩ (max) at VGS = -4.5V  
  - 60mΩ (max) at VGS = -2.5V  

### **Package:**  
- **Type:** TO-252 (DPAK)  

### **Features:**  
- **P-Channel Enhancement Mode MOSFET**  
- **Low On-Resistance (RDS(on))** for efficient power handling  
- **Fast Switching Speed**  
- **High Power and Current Handling Capability**  
- **Avalanche Energy Specified** for robustness in switching applications  

### **Applications:**  
- Power management in DC-DC converters  
- Load switching  
- Battery protection circuits  
- Motor control  

This information is based solely on the provided knowledge base. No additional guidance or suggestions are included.

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