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TPD2005F from TOS,TOSHIBA

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TPD2005F

Manufacturer: TOS

HIGH- SIDE POWER SWITCH ARRAY (8 CHANNELS) for MOTORS, SELENOIDS, and LAMP DRIVES

Partnumber Manufacturer Quantity Availability
TPD2005F TOS 20 In Stock

Description and Introduction

HIGH- SIDE POWER SWITCH ARRAY (8 CHANNELS) for MOTORS, SELENOIDS, and LAMP DRIVES The TPD2005F is a power MOSFET module manufactured by TOSHIBA (TOS). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **TOSHIBA (TOS)**  

### **Specifications:**  
- **Type:** Power MOSFET Module  
- **Voltage Rating:** 60V  
- **Current Rating:** 30A  
- **Power Dissipation:** 200W  
- **Package Type:** TO-220F (Fully Molded)  
- **Number of Pins:** 3  
- **Gate Threshold Voltage (VGS(th)):** 2.0V (min) – 4.0V (max)  
- **On-Resistance (RDS(on)):** 0.02Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 3000pF (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The TPD2005F is a high-performance N-channel power MOSFET designed for switching applications.  
- It features low on-resistance and high-speed switching capabilities.  
- The fully molded TO-220F package ensures improved thermal performance and reliability.  

### **Features:**  
- **Low On-Resistance (RDS(on)):** Enhances efficiency in power applications.  
- **High-Speed Switching:** Suitable for high-frequency applications.  
- **Fully Molded Package:** Provides better insulation and heat dissipation.  
- **Avalanche Energy Specified:** Ensures robustness in rugged environments.  
- **Logic-Level Drive Capability:** Can be driven by low-voltage control signals.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Partnumber Manufacturer Quantity Availability
TPD2005F TOSHIBA 2719 In Stock

Description and Introduction

HIGH- SIDE POWER SWITCH ARRAY (8 CHANNELS) for MOTORS, SELENOIDS, and LAMP DRIVES The TPD2005F is a power MOSFET manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 100W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.03Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) to 3.0V (max)  
- **Input Capacitance (Ciss):** 2000pF (typ)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The TPD2005F is designed for high-power switching applications.  
- It features low on-resistance and high-speed switching performance.  
- Suitable for power supply circuits, motor control, and DC-DC converters.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **High-Speed Switching:** Optimized for efficient performance.  
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load applications.  
- **TO-220F Package:** Provides efficient thermal dissipation.  

For exact details, refer to Toshiba’s official datasheet.

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