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TP0610L from VISHAY

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TP0610L

Manufacturer: VISHAY

Enhancement-Mode MOSFET Transistors

Partnumber Manufacturer Quantity Availability
TP0610L VISHAY 4500 In Stock

Description and Introduction

Enhancement-Mode MOSFET Transistors **TP0610L Manufacturer: VISHAY**  

### **Specifications:**  
- **Part Number:** TP0610L  
- **Manufacturer:** VISHAY  
- **Type:** P-Channel MOSFET  
- **Voltage Rating (VDS):** -60V  
- **Current Rating (ID):** -6.3A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 0.28Ω (max) @ VGS = -10V  
- **Gate Threshold Voltage (VGS(th)):** -1V to -3V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Package:** TO-252 (DPAK)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
The TP0610L is a P-Channel MOSFET from VISHAY designed for power management applications. It features low on-resistance and high switching efficiency, making it suitable for DC-DC converters, load switching, and battery management systems.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced power loss  
- Fast switching performance  
- High current handling capability  
- Avalanche energy rated for ruggedness  
- Lead-free and RoHS compliant  

For detailed datasheet information, refer to VISHAY's official documentation.

Application Scenarios & Design Considerations

Enhancement-Mode MOSFET Transistors
Partnumber Manufacturer Quantity Availability
TP0610L SI 5100 In Stock

Description and Introduction

Enhancement-Mode MOSFET Transistors Here is the factual information about part TP0610L manufacturer SI specifications, descriptions, and features:  

### **Manufacturer:** SI (Siliconix or Vishay Siliconix)  

### **Part Number:** TP0610L  

### **Description:**  
The TP0610L is a P-channel enhancement mode MOSFET transistor. It is designed for low-voltage, high-speed switching applications.  

### **Key Specifications:**  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -3.5A  
- **Pulsed Drain Current (IDM):** -14A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 0.1Ω (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.8V to -2.5V  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Package:** TO-252 (DPAK)  

### **Features:**  
- Low on-resistance for efficient power handling  
- Fast switching speed  
- Suitable for battery-powered applications  
- Logic-level gate drive capability  
- RoHS compliant  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Enhancement-Mode MOSFET Transistors

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