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TN0201K from VISHAY

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TN0201K

Manufacturer: VISHAY

MOSFETs

Partnumber Manufacturer Quantity Availability
TN0201K VISHAY 10000 In Stock

Description and Introduction

MOSFETs The TN0201K is a N-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** TN0201K  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** 1.2A  
- **Pulsed Drain Current (IDM):** 4.8A  
- **Power Dissipation (PD):** 0.63W  
- **On-Resistance (RDS(on)):** 0.6Ω (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.5V to 2.5V  
- **Input Capacitance (Ciss):** 60pF (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23  

### **Descriptions:**  
- The TN0201K is a small-signal N-channel MOSFET designed for low-voltage switching applications.  
- It is suitable for power management, load switching, and signal amplification in portable and battery-powered devices.  

### **Features:**  
- Low on-resistance (RDS(on)) for efficient power handling.  
- Fast switching performance.  
- Compact SOT-23 package for space-constrained applications.  
- RoHS compliant.  

This information is based solely on the manufacturer's datasheet. For detailed performance characteristics, refer to Vishay's official documentation.

Partnumber Manufacturer Quantity Availability
TN0201K SAMPLE 3000 In Stock

Description and Introduction

MOSFETs The part TN0201K is manufactured by SAMPLE. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** Transistor  
- **Package:** TO-92  
- **Polarity:** NPN  
- **Maximum Collector-Emitter Voltage (Vce):** 40V  
- **Maximum Collector Current (Ic):** 200mA  
- **Power Dissipation (Pd):** 625mW  
- **Transition Frequency (ft):** 300MHz  
- **Gain Bandwidth Product (hFE):** 100-300  

### **Descriptions:**  
- A general-purpose NPN bipolar junction transistor (BJT).  
- Suitable for amplification and switching applications.  
- Compact and widely used in low-power circuits.  

### **Features:**  
- Low noise performance.  
- High current gain.  
- Reliable and cost-effective.  
- RoHS compliant.  

This information is strictly factual from Ic-phoenix technical data files.

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