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TK22E10N1 from Toshiba

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TK22E10N1

Manufacturer: Toshiba

Power MOSFET (N-ch single 60V<VDSS≤150V)

Partnumber Manufacturer Quantity Availability
TK22E10N1 Toshiba 30000 In Stock

Description and Introduction

Power MOSFET (N-ch single 60V<VDSS≤150V) The part **TK22E10N1** is manufactured by **Toshiba**.  

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating:** 600V  
- **Current Rating:** 22A  
- **Package:** TO-247  

### **Descriptions and Features:**  
- Designed for high-efficiency switching applications.  
- Low saturation voltage for reduced power loss.  
- Fast switching speed for improved performance.  
- High ruggedness and reliability.  
- Suitable for motor control, power supplies, and inverters.  

For exact datasheet details, refer to Toshiba's official documentation.

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