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TA4014FT from TOSHIBA

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TA4014FT

Manufacturer: TOSHIBA

Use for Crystal Oscillators

Partnumber Manufacturer Quantity Availability
TA4014FT TOSHIBA 9000 In Stock

Description and Introduction

Use for Crystal Oscillators The TA4014FT is a semiconductor device manufactured by Toshiba. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Toshiba  
- **Type:** Transistor (Bipolar Junction Transistor - BJT)  
- **Package:** SOT-23 (Small Outline Transistor)  
- **Polarity:** NPN  
- **Maximum Ratings:**  
  - **Collector-Base Voltage (VCBO):** 50V  
  - **Collector-Emitter Voltage (VCEO):** 50V  
  - **Emitter-Base Voltage (VEBO):** 5V  
  - **Collector Current (IC):** 100mA  
  - **Total Power Dissipation (PT):** 200mW  
- **Electrical Characteristics:**  
  - **DC Current Gain (hFE):** 120 to 400 (at IC = 1mA, VCE = 6V)  
  - **Collector-Emitter Saturation Voltage (VCE(sat)):** 0.3V (max) (at IC = 10mA, IB = 1mA)  
  - **Transition Frequency (fT):** 250MHz (typical)  

### **Descriptions:**  
- The TA4014FT is a high-speed switching NPN transistor in a compact SOT-23 package.  
- It is designed for low-power amplification and switching applications.  

### **Features:**  
- **High-Speed Switching:** Suitable for high-frequency applications.  
- **Low Saturation Voltage:** Enhances efficiency in switching circuits.  
- **Compact Package:** SOT-23 allows for space-saving PCB designs.  
- **Wide hFE Range:** Provides flexibility in circuit design.  

For detailed application notes or additional parameters, refer to Toshiba's official datasheet.

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