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TDE1787ADP from ST,ST Microelectronics

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TDE1787ADP

Manufacturer: ST

INTERFACE CIRCUIT (RELAY AND LAMP

Partnumber Manufacturer Quantity Availability
TDE1787ADP ST 104 In Stock

Description and Introduction

INTERFACE CIRCUIT (RELAY AND LAMP The part **TDE1787ADP** is manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** STMicroelectronics  
- **Part Number:** TDE1787ADP  
- **Type:** Dual NPN/PNP Resistor-Equipped Transistor (RET)  
- **Configuration:** Dual NPN + PNP  
- **Package:** SOT-457 (SC-74)  
- **Maximum Collector-Base Voltage (VCB):**  
  - NPN: 50V  
  - PNP: -50V  
- **Maximum Collector-Emitter Voltage (VCE):**  
  - NPN: 50V  
  - PNP: -50V  
- **Maximum Emitter-Base Voltage (VEB):**  
  - NPN: 5V  
  - PNP: -5V  
- **Continuous Collector Current (IC):**  
  - NPN: 100mA  
  - PNP: -100mA  
- **Total Power Dissipation (Ptot):** 200mW  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The **TDE1787ADP** is a dual NPN and PNP transistor with built-in resistors, designed for switching and amplification applications. It is housed in a compact **SOT-457 (SC-74)** package, making it suitable for space-constrained PCB designs.

### **Features:**  
- **Integrated Base Resistors** (R1 = 10kΩ, R2 = 10kΩ)  
- **Low Saturation Voltage**  
- **High Current Gain (hFE)**  
- **Designed for General-Purpose Switching and Amplification**  
- **Pb-Free and RoHS Compliant**  

This information is based on STMicroelectronics' official documentation. For detailed application notes or further technical support, refer to the manufacturer's datasheet.

Application Scenarios & Design Considerations

INTERFACE CIRCUIT (RELAY AND LAMP
Partnumber Manufacturer Quantity Availability
TDE1787ADP 30 In Stock

Description and Introduction

INTERFACE CIRCUIT (RELAY AND LAMP The part **TDE1787ADP** is a **Power MOSFET** manufactured by **STMicroelectronics**.  

### **Manufacturer Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDSS):** 60V  
- **Current Rating (ID):** 30A  
- **Power Dissipation (PD):** 75W  
- **On-Resistance (RDS(on)):** 0.028Ω (max) @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Package:** DPAK (TO-252)  

### **Descriptions and Features:**  
- Designed for high-efficiency power switching applications.  
- Low gate charge for fast switching performance.  
- Low on-resistance for reduced conduction losses.  
- Suitable for DC-DC converters, motor control, and power management circuits.  
- Avalanche ruggedness for improved reliability in harsh conditions.  

For exact datasheet details, refer to the official **STMicroelectronics** documentation.

Application Scenarios & Design Considerations

INTERFACE CIRCUIT (RELAY AND LAMP

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