Single Operational Amplifier The **TC75S60FU** is a power MOSFET manufactured by **TOSHIBA**. Below are its specifications, descriptions, and features based on available information:
### **Specifications:**
- **Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 75A
- **Pulsed Drain Current (IDM):** 300A
- **Power Dissipation (PD):** 300W
- **Gate-Source Voltage (VGS):** ±30V
- **Drain-Source On-Resistance (RDS(on)):** 0.075Ω (max) @ VGS = 10V
- **Input Capacitance (Ciss):** 3000pF (typical)
- **Output Capacitance (Coss):** 500pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 60ns (typical)
- **Operating Temperature Range:** -55°C to +150°C
### **Description:**
The **TC75S60FU** is a high-voltage, high-current N-Channel MOSFET designed for power switching applications. It features low on-resistance and fast switching characteristics, making it suitable for high-efficiency power conversion systems.
### **Features:**
- **Low On-Resistance (RDS(on)):** Enhances power efficiency.
- **High-Speed Switching:** Optimized for fast switching applications.
- **High Voltage Rating (600V):** Suitable for industrial and automotive applications.
- **Low Gate Charge:** Reduces switching losses.
- **Avalanche Energy Specified:** Ensures robustness in harsh conditions.
- **TO-3P Package:** Provides good thermal dissipation.
This information is based on TOSHIBA's datasheet for the **TC75S60FU** MOSFET. For detailed application notes and reliability data, refer to the official documentation.
