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TC58FVT800FT-85 from TOS,TOSHIBA

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TC58FVT800FT-85

Manufacturer: TOS

8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY

Partnumber Manufacturer Quantity Availability
TC58FVT800FT-85,TC58FVT800FT85 TOS 893 In Stock

Description and Introduction

8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY The TC58FVT800FT-85 is a NAND Flash Memory product manufactured by Toshiba. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Memory Type:** NAND Flash  
- **Density:** 8Gb (1GB)  
- **Organization:** 512M x 16-bit  
- **Supply Voltage:** 2.7V - 3.6V  
- **Operating Temperature:** -40°C to +85°C  
- **Speed:** 85ns (access time)  
- **Package:** TSOP (Thin Small Outline Package)  
- **Interface:** Asynchronous  

### **Descriptions:**
- The TC58FVT800FT-85 is a high-performance, single-level cell (SLC) NAND Flash memory.  
- It is designed for applications requiring reliable, high-speed data storage.  
- Suitable for embedded systems, industrial applications, and consumer electronics.  

### **Features:**
- **High Reliability:** SLC NAND technology ensures stable performance.  
- **Low Power Consumption:** Optimized for power-sensitive applications.  
- **Hardware Data Protection:** Includes write-protect and power-on reset functions.  
- **Bad Block Management:** Supports automatic bad block handling.  
- **Compatibility:** Asynchronous interface for easy integration.  

This information is based solely on the manufacturer's provided data.

Application Scenarios & Design Considerations

8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
Partnumber Manufacturer Quantity Availability
TC58FVT800FT-85,TC58FVT800FT85 TOSHIBA 120 In Stock

Description and Introduction

8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY The **TC58FVT800FT-85** is a NAND flash memory product manufactured by **TOSHIBA**. Below are its key specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Memory Type:** NAND Flash  
- **Density:** 8Gb (1GB)  
- **Organization:**  
  - Page Size: 4KB + 128B (Spare Area)  
  - Block Size: 512KB (128 Pages per Block)  
- **Interface:** Asynchronous NAND Flash  
- **Voltage Supply:**  
  - **VCC:** 2.7V – 3.6V  
  - **VCCQ (I/O Voltage):** 1.7V – 1.95V  
- **Speed:**  
  - **tRC (Read Cycle Time):** 85ns (Max)  
  - **tWC (Write Cycle Time):** 85ns (Max)  
- **Operating Temperature:**  
  - Commercial Grade: 0°C to +70°C  
  - Industrial Grade: -40°C to +85°C (if applicable)  
- **Package:**  
  - **TSOP48 (48-pin Thin Small Outline Package)**  

### **Descriptions & Features:**  
- **High-Performance NAND Flash:** Designed for fast read/write operations with an 85ns access time.  
- **Reliable Data Storage:** Includes **ECC (Error Correction Code)** support for improved data integrity.  
- **Low Power Consumption:** Optimized for power-sensitive applications.  
- **Compatibility:** Supports standard NAND flash commands and interfaces.  
- **Applications:** Suitable for embedded systems, SSDs, USB drives, and other storage solutions.  

For exact details, refer to the official **TOSHIBA datasheet** or product documentation.

Application Scenarios & Design Considerations

8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY

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