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TC58FVT160AXB-70 from TOSHIBA

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TC58FVT160AXB-70

Manufacturer: TOSHIBA

16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY

Partnumber Manufacturer Quantity Availability
TC58FVT160AXB-70,TC58FVT160AXB70 TOSHIBA 451 In Stock

Description and Introduction

16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY The TC58FVT160AXB-70 is a NAND flash memory product manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Memory Type:** NAND Flash  
- **Density:** 16M x 8-bit (128Mbit)  
- **Supply Voltage:** 3.3V ± 10%  
- **Access Time:** 70ns (max)  
- **Organization:**  
  - 16M words × 8 bits  
  - 512K bytes × 8 bits (redundant area)  
- **Page Size:** 512 bytes + 16 bytes (redundant)  
- **Block Size:** 16K bytes + 512 bytes (redundant)  
- **Package:** 48-pin TSOP (Type I)  
- **Operating Temperature Range:**  
  - Commercial: 0°C to +70°C  
  - Industrial: -40°C to +85°C  

### **Descriptions:**  
- The TC58FVT160AXB-70 is a 3.3V NAND flash memory device designed for high-speed data storage applications.  
- It features a serial interface and supports both sequential and random read operations.  
- Includes an integrated error detection and correction (ECC) function for data reliability.  

### **Features:**  
- **High-Speed Performance:**  
  - Page read: 70ns (max)  
  - Page program: 200µs (typical)  
  - Block erase: 2ms (typical)  
- **Low Power Consumption:**  
  - Active current: 25mA (typical)  
  - Standby current: 100µA (max)  
- **Reliability:**  
  - Endurance: 100,000 program/erase cycles per block  
  - Data retention: 10 years (at 25°C)  
- **Command-Based Operation:**  
  - Supports standard NAND flash commands (read, program, erase, etc.)  
- **On-Chip Bad Block Management:**  
  - Includes factory-marked bad blocks and user-programmable spare blocks.  

This device is commonly used in embedded systems, digital cameras, USB drives, and other storage applications.

Application Scenarios & Design Considerations

16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY

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