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TC58FVT160AFT70 from TOSHIBA

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TC58FVT160AFT70

Manufacturer: TOSHIBA

16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY

Partnumber Manufacturer Quantity Availability
TC58FVT160AFT70 TOSHIBA 8000 In Stock

Description and Introduction

16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY The **TC58FVT160AFT70** is a NAND Flash Memory product manufactured by **TOSHIBA**. Below are its key specifications, descriptions, and features based on available information:

### **Specifications:**
- **Memory Type:** NAND Flash  
- **Density:** 16Gbit (2GByte)  
- **Organization:**  
  - Page Size: 8,192 bytes + 448 bytes (spare area)  
  - Block Size: 128 pages (1,048,576 bytes + 57,344 bytes spare)  
- **Interface:** Asynchronous NAND Flash Interface  
- **Voltage Supply:**  
  - **Vcc:** 2.7V - 3.6V  
  - **VccQ (I/O):** 1.7V - 1.95V  
- **Speed:**  
  - **Page Read Time:** 25µs (typical)  
  - **Page Program Time:** 300µs (typical)  
  - **Block Erase Time:** 2ms (typical)  
- **Operating Temperature Range:**  
  - **Commercial:** 0°C to +70°C  
  - **Industrial:** -40°C to +85°C  
- **Package:** 48-pin TSOP (Thin Small Outline Package)  

### **Descriptions:**
- The **TC58FVT160AFT70** is a **multi-level cell (MLC)** NAND flash memory device designed for high-density storage applications.  
- It supports **on-chip ECC (Error Correction Code)** for improved data reliability.  
- Suitable for **embedded systems, consumer electronics, and industrial applications** requiring non-volatile storage.  

### **Features:**
- **High Performance:** Fast read, program, and erase operations.  
- **Low Power Consumption:** Optimized for power-sensitive applications.  
- **Reliable Data Retention:** Supports extended data retention periods.  
- **Hardware Data Protection:** Includes **WP (Write Protect)** pin for preventing accidental writes.  
- **Compatibility:** Follows standard NAND flash command sets for easy integration.  

For detailed datasheets or additional technical support, refer to **TOSHIBA's official documentation**.

Application Scenarios & Design Considerations

16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY

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