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TC58DVG02A1FT00 from TOSHIBA

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TC58DVG02A1FT00

Manufacturer: TOSHIBA

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Partnumber Manufacturer Quantity Availability
TC58DVG02A1FT00 TOSHIBA 5380 In Stock

Description and Introduction

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS The **TC58DVG02A1FT00** is a NAND flash memory product manufactured by **TOSHIBA**. Below are its key specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Memory Type:** NAND Flash  
- **Density:** 2Gb (256MB)  
- **Organization:**  
  - Page Size: 2,112 bytes (2,048 + 64 bytes spare)  
  - Block Size: 128KB (64 pages per block)  
- **Interface:** Asynchronous NAND  
- **Voltage Supply:**  
  - VCC: 2.7V - 3.6V  
- **Operating Temperature:**  
  - Commercial Grade: 0°C to +70°C  
  - Industrial Grade: -40°C to +85°C (if applicable)  
- **Package:**  
  - TSOP48 (48-pin Thin Small Outline Package)  
- **Speed:**  
  - Page Read Time: 25μs (typical)  
  - Page Program Time: 300μs (typical)  
  - Block Erase Time: 2ms (typical)  

### **Descriptions & Features:**  
- **Reliable NAND Flash:** Designed for embedded storage applications.  
- **ECC Support:** Requires external error correction (ECC) for data integrity.  
- **On-Chip Bad Block Management:** Includes factory-marked bad blocks.  
- **Command Set:** Standard NAND flash command interface.  
- **Endurance:**  
  - Typically 100,000 program/erase cycles per block.  
- **Applications:**  
  - Used in consumer electronics, industrial systems, and embedded storage solutions.  

For detailed datasheets or additional technical information, refer to **TOSHIBA's official documentation**.

Application Scenarios & Design Considerations

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Partnumber Manufacturer Quantity Availability
TC58DVG02A1FT00 445 In Stock

Description and Introduction

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS The **TC58DVG02A1FT00** is a NAND Flash Memory IC manufactured by **Toshiba** (now Kioxia). Below are the key specifications, descriptions, and features based on available information:

### **Specifications:**
- **Memory Type:** NAND Flash  
- **Density:** 2Gb (256MB)  
- **Interface:** Asynchronous  
- **Organization:**  
  - Page Size: 2,112 bytes (2,048 + 64 spare)  
  - Block Size: 128KB (64 pages per block)  
- **Supply Voltage:** 2.7V - 3.6V  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) depending on variant  
- **Package:** TSOP-48  

### **Descriptions:**  
- The **TC58DVG02A1FT00** is a **2Gb SLC (Single-Level Cell)** NAND Flash memory chip designed for high-performance and reliable data storage.  
- It supports **asynchronous operation**, making it suitable for embedded systems, industrial applications, and consumer electronics.  
- Includes **on-chip ECC (Error Correction Code)** for improved data integrity.  

### **Features:**  
- **High Reliability:** SLC NAND ensures longer endurance and better performance compared to MLC/TLC.  
- **Low Power Consumption:** Optimized for power-sensitive applications.  
- **Fast Read/Write Performance:**  
  - Page Read Time: **25µs (max)**  
  - Page Program Time: **200µs (typical)**  
  - Block Erase Time: **2ms (typical)**  
- **Hardware Data Protection:** Write-protect feature and power-on reset.  
- **Compatibility:** Supports standard NAND Flash command sets.  

This information is based on Toshiba's (Kioxia) datasheet and industry specifications. For exact details, refer to the official documentation.

Application Scenarios & Design Considerations

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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