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TC55V16256J-15 from N/A

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TC55V16256J-15

Manufacturer: N/A

262,144-WORD BY 16-BIT CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55V16256J-15,TC55V16256J15 N/A 65 In Stock

Description and Introduction

262,144-WORD BY 16-BIT CMOS STATIC RAM Here is the factual information about the part **TC55V16256J-15** from Ic-phoenix technical data files:  

### **Manufacturer**: N/A  

### **Specifications**:  
- **Part Number**: TC55V16256J-15  
- **Type**: 256K x 16-bit (4Mb) CMOS Static RAM (SRAM)  
- **Speed**: 15 ns access time  
- **Voltage**: 5V ±10%  
- **Organization**: 262,144 words × 16 bits  
- **Package**: 44-pin TSOP (Thin Small Outline Package)  
- **Operating Temperature**: Commercial (0°C to +70°C)  

### **Descriptions and Features**:  
- High-speed CMOS SRAM with 15 ns access time  
- Low power consumption in both active and standby modes  
- Fully static operation; no clock or refresh required  
- TTL-compatible inputs and outputs  
- Single 5V power supply  
- Three-state outputs for bus compatibility  
- Industrial standard pin configuration  

This information is based solely on the available technical data for the part. No additional recommendations or interpretations are included.

Application Scenarios & Design Considerations

262,144-WORD BY 16-BIT CMOS STATIC RAM
Partnumber Manufacturer Quantity Availability
TC55V16256J-15,TC55V16256J15 TOSHIBA 5704 In Stock

Description and Introduction

262,144-WORD BY 16-BIT CMOS STATIC RAM The TC55V16256J-15 is a 256K-word × 16-bit CMOS synchronous DRAM (SDRAM) manufactured by Toshiba. Below are its specifications, descriptions, and features:

### **Specifications:**  
- **Organization:** 262,144 words × 16 bits (4 banks)  
- **Operating Voltage:** 3.3V ± 0.3V  
- **Access Time:** 15ns (CL=3)  
- **Clock Frequency:** 66MHz (max)  
- **Refresh Cycles:** 4,096 refresh cycles / 64ms  
- **Package:** 54-pin TSOP (II)  

### **Descriptions:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Interface:** Fully synchronous with a single 3.3V power supply  
- **Burst Modes:** Supports programmable burst lengths (1, 2, 4, 8, or full page)  
- **CAS Latency:** 2 or 3 (programmable)  
- **Auto Refresh & Self Refresh:** Supported  

### **Features:**  
- **High-Speed Operation:** Up to 66MHz clock frequency  
- **Burst Read/Write:** Supports sequential and interleaved burst modes  
- **Low Power Consumption:** Standby and power-down modes available  
- **4-Bank Architecture:** Allows concurrent operations  
- **Compliant with JEDEC Standards:** Meets industry-standard SDRAM specifications  

This SDRAM is designed for high-performance applications requiring fast data access and efficient power management.

Application Scenarios & Design Considerations

262,144-WORD BY 16-BIT CMOS STATIC RAM

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