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TC558128BFT-12 from TOSHIBA

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TC558128BFT-12

Manufacturer: TOSHIBA

131,072-WORD BY 8-BIT CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
TC558128BFT-12,TC558128BFT12 TOSHIBA 1400 In Stock

Description and Introduction

131,072-WORD BY 8-BIT CMOS STATIC RAM The TC558128BFT-12 is a 1M x 8-bit CMOS static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 1,048,576 words × 8 bits (1M × 8)
- **Supply Voltage:** 3.3V ± 0.3V
- **Access Time:** 12 ns (max)
- **Operating Current:** 60 mA (typical)
- **Standby Current:** 5 µA (typical, in CMOS standby mode)
- **Operating Temperature Range:** -40°C to +85°C
- **Package:** 32-pin TSOP (Thin Small Outline Package)
- **Pin Configuration:** Compatible with other 1M × 8 SRAMs

### **Descriptions:**
- **Type:** High-speed, low-power CMOS SRAM
- **Function:** Provides fast read/write operations for embedded systems, networking, and computing applications.
- **Interface:** Parallel (8-bit data bus)
- **Refresh:** Not required (static RAM retains data without refresh cycles)
- **Data Retention:** Guaranteed in standby mode with reduced voltage (2.0V min)

### **Features:**
- **Low Power Consumption:** Supports battery-backed applications.
- **High-Speed Operation:** 12 ns access time for performance-critical systems.
- **CMOS Technology:** Ensures low standby current.
- **Wide Temperature Range:** Suitable for industrial and automotive applications.
- **Single 3.3V Supply:** Compatible with modern low-voltage systems.
- **TTL-Compatible Inputs/Outputs:** Ensures easy interfacing with other logic families.
- **Automatic Power-Down:** When chip enable (CE) is deasserted.

This SRAM is commonly used in cache memory, buffering, and data storage applications where fast access and low power are essential.

Application Scenarios & Design Considerations

131,072-WORD BY 8-BIT CMOS STATIC RAM

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