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TC55257DTRL-55V from TOSHIBA

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TC55257DTRL-55V

Manufacturer: TOSHIBA

MOS DIGITAL INTEGRATED CIRCUIT

Partnumber Manufacturer Quantity Availability
TC55257DTRL-55V,TC55257DTRL55V TOSHIBA 5530 In Stock

Description and Introduction

MOS DIGITAL INTEGRATED CIRCUIT Here are the factual details about the **TC55257DTRL-55V** from the manufacturer **TOSHIBA**:

### **Specifications:**
1. **Manufacturer:** TOSHIBA  
2. **Part Number:** TC55257DTRL-55V  
3. **Type:** SRAM (Static Random-Access Memory)  
4. **Density:** 256Kb (32K x 8-bit)  
5. **Voltage Supply:** 5V (operating range: 4.5V to 5.5V)  
6. **Access Time:** 55ns  
7. **Package:** TSOP (Thin Small Outline Package)  
8. **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) (verify specific variant)  
9. **Interface:** Parallel (Asynchronous)  
10. **Standby Current:** Low power consumption in standby mode  
11. **Organization:** 32,768 words × 8 bits  

### **Descriptions:**
- The **TC55257DTRL-55V** is a high-speed CMOS static RAM designed for applications requiring fast access times and low power consumption.  
- It is commonly used in embedded systems, networking equipment, and industrial applications.  
- The 5V operation makes it compatible with legacy systems.  

### **Features:**
- **High-Speed Access:** 55ns access time.  
- **Low Power Consumption:** CMOS technology ensures reduced power usage.  
- **Wide Voltage Range:** Operates from 4.5V to 5.5V.  
- **Asynchronous Operation:** No clock signal required.  
- **TSOP Package:** Compact and suitable for space-constrained designs.  
- **Tri-State Outputs:** Allows bus sharing in multi-device configurations.  

For exact pin configurations, timing diagrams, or additional electrical characteristics, refer to the official **TOSHIBA datasheet**.

Application Scenarios & Design Considerations

MOS DIGITAL INTEGRATED CIRCUIT

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