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TC55257BFL-10 from TOS,TOSHIBA

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TC55257BFL-10

Manufacturer: TOS

SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55257BFL-10,TC55257BFL10 TOS 250 In Stock

Description and Introduction

SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM The TC55257BFL-10 is a 256K (32K x 8) Static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Organization:** 32K x 8 bits  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 10 ns (max)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 28-pin SOP (Small Outline Package)  
- **Power Consumption:**  
  - Active: 275 mW (max)  
  - Standby: 27.5 mW (max)  
- **Data Retention Voltage:** 2V (min)  
- **Pin Configuration:** Compatible with industry-standard 32K x 8 SRAMs  

### **Descriptions:**  
- High-speed CMOS static RAM with a fully static operation (no clock or refresh required).  
- Designed for applications requiring fast access times and low power consumption.  
- Suitable for cache memory, battery-backed systems, and embedded applications.  

### **Features:**  
- **Fast Access Time:** 10 ns maximum  
- **Low Power Consumption:**  
  - Active current: 55 mA (typical)  
  - Standby current: 5.5 mA (typical)  
- **Tri-State Outputs:** Allows direct connection to a common bus.  
- **TTL-Compatible Inputs/Outputs**  
- **Single 5V Power Supply**  
- **Fully Static Operation:** No refresh cycles needed.  
- **Data Retention in Standby Mode**  

This SRAM is commonly used in industrial, computing, and telecommunications applications where fast and reliable memory access is required.  

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Application Scenarios & Design Considerations

SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM

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