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TC5517CFL-20 from TOS,TOSHIBA

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TC5517CFL-20

Manufacturer: TOS

200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM

Partnumber Manufacturer Quantity Availability
TC5517CFL-20,TC5517CFL20 TOS 3 In Stock

Description and Introduction

200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM The TC5517CFL-20 is a CMOS static RAM (SRAM) manufactured by Toshiba. Below are the key specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Organization:** 16K x 8 bits (131,072 bits)  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 20 ns (max)  
- **Operating Current:** 40 mA (max)  
- **Standby Current:** 10 µA (max)  
- **Package:** 28-pin DIP (Dual In-line Package) or SOP (Small Outline Package)  
- **Operating Temperature Range:** 0°C to +70°C  

### **Descriptions:**  
- The TC5517CFL-20 is a high-speed, low-power CMOS static RAM.  
- It is designed for applications requiring fast access times and low power consumption.  
- Fully static operation allows for no clock or refresh requirements.  
- Compatible with TTL levels for easy interfacing.  

### **Features:**  
- **High-Speed Performance:** 20 ns access time.  
- **Low Power Consumption:**  
  - Active current: 40 mA (max)  
  - Standby current: 10 µA (max)  
- **Fully Static Operation:** No refresh cycles needed.  
- **TTL-Compatible Inputs/Outputs:** Easy integration with TTL logic.  
- **Single 5V Power Supply:** Simplifies system design.  
- **Three-State Outputs:** Allows bus sharing in multi-master systems.  

This information is based solely on the manufacturer's datasheet for the TC5517CFL-20.

Application Scenarios & Design Considerations

200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM

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