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TC551001BFL70L from TOSHIBA

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TC551001BFL70L

Manufacturer: TOSHIBA

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC551001BFL70L TOSHIBA 6100 In Stock

Description and Introduction

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM The TC551001BFL70L is a 1Mbit (128K x 8-bit) CMOS static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 128K words × 8 bits  
- **Operating Voltage:** 4.5V to 5.5V  
- **Access Time:** 70ns  
- **Operating Current:** 40mA (max)  
- **Standby Current:** 10μA (max, CMOS level)  
- **Package:** 32-pin SOP (Small Outline Package)  
- **Operating Temperature Range:** 0°C to +70°C  

### **Descriptions:**
- **Type:** High-speed CMOS static RAM  
- **Pin Configuration:** Compatible with JEDEC standard 32-pin SOP  
- **Data Retention:** Guaranteed in standby mode with reduced voltage (2V min)  

### **Features:**
- **Low Power Consumption:** CMOS technology ensures low standby current.  
- **Fully Static Operation:** No clock or refresh required.  
- **Tri-State Output:** Allows direct connection to a common bus.  
- **Single 5V Power Supply:** Simplifies system design.  
- **TTL-Compatible Inputs/Outputs:** Ensures easy interfacing with TTL logic.  
- **High Reliability:** Manufactured with Toshiba’s advanced CMOS process.  

This SRAM is suitable for applications requiring fast, low-power memory, such as embedded systems, industrial controls, and telecommunications equipment.

Application Scenarios & Design Considerations

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

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