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TC551001BFL-70L from TOSHIBA

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TC551001BFL-70L

Manufacturer: TOSHIBA

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC551001BFL-70L,TC551001BFL70L TOSHIBA 16000 In Stock

Description and Introduction

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM The **TC551001BFL-70L** is a **1M-bit (128K x 8-bit) CMOS Static RAM (SRAM)** manufactured by **Toshiba**.  

### **Key Specifications:**  
- **Organization:** 128K × 8-bit  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 70ns  
- **Low Power Consumption:**  
  - **Active Current:** 40mA (max)  
  - **Standby Current:** 10μA (max)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 32-pin SOP (Small Outline Package)  

### **Features:**  
- **Fully Static Operation** (no clock or refresh required)  
- **Single 5V Power Supply**  
- **TTL-Compatible Inputs/Outputs**  
- **Tri-State Output**  
- **Battery Backup Support** (data retention at reduced voltage)  
- **High Noise Immunity**  

This SRAM is commonly used in applications requiring **fast and reliable data storage**, such as embedded systems, industrial controls, and telecommunications equipment.  

Would you like additional details on pin configuration or timing characteristics?

Application Scenarios & Design Considerations

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
Partnumber Manufacturer Quantity Availability
TC551001BFL-70L,TC551001BFL70L TOSH 795 In Stock

Description and Introduction

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM The TC551001BFL-70L is a 1Mbit (128K x 8) CMOS static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 128K words × 8 bits  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 70ns  
- **Operating Current:** 40mA (max)  
- **Standby Current:** 10μA (max, CMOS level)  
- **Package:** 32-pin SOP (Small Outline Package)  
- **Operating Temperature Range:** 0°C to +70°C  

### **Descriptions:**
- **Type:** Asynchronous CMOS SRAM  
- **Density:** 1 Megabit (1,048,576 bits)  
- **Data Retention:** Guaranteed with 2V minimum supply voltage  
- **Pin Configuration:** Compatible with other 128K × 8 SRAMs  

### **Features:**
- **Low Power Consumption:** CMOS technology ensures low standby current.  
- **Fully Static Operation:** No clock or refresh required.  
- **Tri-State Output:** Allows direct connection to a common bus.  
- **TTL-Compatible Inputs/Outputs:** Ensures compatibility with TTL logic levels.  
- **High Reliability:** Manufactured with Toshiba's advanced CMOS process.  

This SRAM is commonly used in applications requiring moderate-speed, low-power memory, such as embedded systems, industrial controls, and telecommunications equipment.

Application Scenarios & Design Considerations

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
Partnumber Manufacturer Quantity Availability
TC551001BFL-70L,TC551001BFL70L TOS 33 In Stock

Description and Introduction

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM The TC551001BFL-70L is a 1Mbit (128K x 8) CMOS static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Organization:** 128K words × 8 bits  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 70ns  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 32-pin SOP (Small Outline Package)  
- **Power Consumption:**  
  - Active: 100mA (max)  
  - Standby: 10μA (max)  

### **Descriptions & Features:**  
- **High-Speed Operation:** 70ns access time for fast read/write operations.  
- **Low Power Consumption:** Features both active and standby modes for power efficiency.  
- **CMOS Technology:** Ensures low power dissipation and high noise immunity.  
- **Fully Static Operation:** No refresh cycles required.  
- **TTL-Compatible Inputs/Outputs:** Ensures compatibility with TTL logic levels.  
- **Tri-State Outputs:** Allows bus sharing in multi-memory systems.  
- **Single 5V Power Supply:** Simplifies system design.  
- **Wide Operating Temperature Range:** Suitable for commercial applications.  

This SRAM is commonly used in applications requiring fast, low-power, and reliable memory, such as embedded systems, networking devices, and industrial controls.  

Let me know if you need further details.

Application Scenarios & Design Considerations

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
Partnumber Manufacturer Quantity Availability
TC551001BFL-70L,TC551001BFL70L 17 In Stock

Description and Introduction

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM The TC551001BFL-70L is a 1Mbit (128K x 8) CMOS static RAM (SRAM) manufactured by Toshiba.  

### **Key Specifications:**  
- **Organization:** 128K x 8  
- **Supply Voltage:** 5V ±10%  
- **Access Time:** 70ns  
- **Operating Current:** 40mA (max)  
- **Standby Current:** 10µA (max)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 32-pin SOP (Small Outline Package)  

### **Features:**  
- **Fully Static Operation:** No refresh required  
- **TTL-Compatible Inputs/Outputs**  
- **Single 5V Power Supply**  
- **Low Power Consumption**  
- **Three-State Outputs**  
- **Battery Backup Operation Capability**  

This SRAM is commonly used in applications requiring fast, low-power memory such as embedded systems, industrial controls, and telecommunications.  

Would you like additional details on pin configuration or timing characteristics?

Application Scenarios & Design Considerations

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

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