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TC528128BJ-10

100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM

Partnumber Manufacturer Quantity Availability
TC528128BJ-10,TC528128BJ10 2 In Stock

Description and Introduction

100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM The part **TC528128BJ-10** is a **128K x 8-bit CMOS Static RAM (SRAM)** manufactured by **Toshiba**.  

### **Key Specifications:**  
- **Organization:** 128K × 8-bit  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 10 ns  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Package Type:** 32-pin Plastic SOP (Small Outline Package)  
- **Low Power Consumption:**  
  - Active Current: 40 mA (max)  
  - Standby Current: 10 μA (max)  

### **Features:**  
- **High-Speed Operation:** 10 ns access time  
- **Fully Static Operation:** No clock or refresh required  
- **TTL-Compatible Inputs/Outputs**  
- **Single 5V Power Supply**  
- **Three-State Outputs**  
- **Battery Backup Capability**  

This SRAM is designed for high-performance applications requiring fast access times and low power consumption.

Application Scenarios & Design Considerations

100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM

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