TC528128BJ-10100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| TC528128BJ-10,TC528128BJ10 | 2 | In Stock | |
Description and Introduction
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM The part **TC528128BJ-10** is a **128K x 8-bit CMOS Static RAM (SRAM)** manufactured by **Toshiba**.  
### **Key Specifications:**   ### **Features:**   This SRAM is designed for high-performance applications requiring fast access times and low power consumption. |
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Application Scenarios & Design Considerations
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM
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