TC51832PL-12Manufacturer: TOS 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| TC51832PL-12,TC51832PL12 | TOS | 78 | In Stock |
Description and Introduction
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM The part **TC51832PL-12** is a **512K (64K x 8) Parallel EEPROM** manufactured by **Toshiba**.  
### **Key Specifications:**   ### **Features:**   This EEPROM is designed for applications requiring non-volatile memory storage with fast read/write operations. |
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Application Scenarios & Design Considerations
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM
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| Partnumber | Manufacturer | Quantity | Availability |
| TC51832PL-12,TC51832PL12 | TOSHIBA | 26 | In Stock |
Description and Introduction
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM The part **TC51832PL-12** is manufactured by **TOSHIBA**. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  
### **Specifications:**   ### **Descriptions:**   ### **Features:**   This information is strictly based on factual details from Ic-phoenix technical data files. Let me know if you need further clarification. |
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Application Scenarios & Design Considerations
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM
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