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TC514400ASJL-70 from TOSHIBA

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TC514400ASJL-70

Manufacturer: TOSHIBA

70 ns, 4-bit generation dynamic RAM

Partnumber Manufacturer Quantity Availability
TC514400ASJL-70,TC514400ASJL70 TOSHIBA 69 In Stock

Description and Introduction

70 ns, 4-bit generation dynamic RAM The part **TC514400ASJL-70** is a **4M (256K x 16) CMOS Pseudo Static RAM (PSRAM)** manufactured by **Toshiba**.  

### **Specifications:**  
- **Organization:** 256K words × 16 bits  
- **Operating Voltage:** 3.3V ± 0.3V  
- **Access Time:** 70 ns  
- **Package:** 44-pin TSOP (Thin Small Outline Package)  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Interface:** Asynchronous  
- **Refresh:** Self-refresh capability (no external refresh required)  
- **Standby Current:** Low power consumption in standby mode  

### **Descriptions & Features:**  
- **High-Speed Operation:** Suitable for applications requiring fast memory access.  
- **Low Power Consumption:** Optimized for battery-powered and portable devices.  
- **CMOS Technology:** Ensures reliability and efficiency.  
- **Pseudo Static RAM (PSRAM):** Combines the benefits of SRAM (no refresh cycles) and DRAM (high density).  
- **Wide Operating Voltage Range:** Supports 3.3V ± 0.3V for compatibility with various systems.  
- **TSOP Package:** Compact form factor for space-constrained designs.  

This PSRAM is commonly used in embedded systems, networking devices, and consumer electronics requiring moderate-speed, low-power memory.

Application Scenarios & Design Considerations

70 ns, 4-bit generation dynamic RAM
Partnumber Manufacturer Quantity Availability
TC514400ASJL-70,TC514400ASJL70 TOS 307 In Stock

Description and Introduction

70 ns, 4-bit generation dynamic RAM The part **TC514400ASJL-70** is manufactured by **Toshiba (TOS)**.  

### **Specifications:**  
- **Type:** DRAM (Dynamic Random-Access Memory)  
- **Density:** 4Mbit (512K x 8)  
- **Speed:** 70ns access time  
- **Voltage:** 5V  
- **Package:** 28-pin SOJ (Small Outline J-Lead)  

### **Descriptions:**  
- A high-speed CMOS dynamic RAM with a 4Mbit capacity.  
- Organized as 512K words by 8 bits.  
- Suitable for applications requiring fast access times and low power consumption.  

### **Features:**  
- **Fast Access Time:** 70ns  
- **Single 5V Power Supply**  
- **Low Power Consumption**  
- **CMOS Technology**  
- **Refresh Cycles:** 512 cycles every 8ms  
- **Compatible with industry-standard pinouts**  

This part is commonly used in older computing and embedded systems where 5V DRAM is required.

Application Scenarios & Design Considerations

70 ns, 4-bit generation dynamic RAM

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