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TC514100J-10

100 ns, 1-bit generation dynamic RAM

Partnumber Manufacturer Quantity Availability
TC514100J-10,TC514100J10 2 In Stock

Description and Introduction

100 ns, 1-bit generation dynamic RAM The TC514100J-10 is a 4M-bit (512K x 8) static RAM (SRAM) manufactured by Toshiba.  

### **Specifications:**  
- **Organization:** 512K x 8 bits  
- **Access Time:** 10 ns  
- **Operating Voltage:** 5V ±10%  
- **Power Consumption:**  
  - Active: 550 mW (max)  
  - Standby: 5.5 mW (max)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 32-pin Plastic DIP (Dual In-line Package)  

### **Descriptions & Features:**  
- **High-Speed Operation:** 10 ns access time for fast data retrieval.  
- **Low Power Consumption:** Features both active and standby power-saving modes.  
- **CMOS Technology:** Ensures low power dissipation and high noise immunity.  
- **Fully Static Operation:** No clock or refresh required.  
- **Tri-State Output:** Allows direct connection to a common bus.  
- **TTL-Compatible Inputs/Outputs:** Ensures compatibility with standard logic levels.  
- **Wide Operating Voltage Range:** Supports 5V ±10% for stable performance.  

This SRAM is commonly used in applications requiring high-speed data access, such as cache memory, networking equipment, and embedded systems.

Application Scenarios & Design Considerations

100 ns, 1-bit generation dynamic RAM

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