N-CHANNEL 600V The **STB20NM60A-1** is a power MOSFET manufactured by **STMicroelectronics (STM)**. Below are its key specifications, descriptions, and features based on Ic-phoenix technical data files:
### **Specifications:**
- **Type:** N-channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 20A (at 25°C)
- **Pulsed Drain Current (IDM):** 80A
- **Power Dissipation (PD):** 190W (at 25°C)
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.19Ω (max at VGS = 10V)
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 1800pF (typical)
- **Output Capacitance (Coss):** 350pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 10ns (typical)
- **Turn-Off Delay Time (td(off)):** 55ns (typical)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
- **Package:** TO-263 (D2PAK)
### **Descriptions:**
- The **STB20NM60A-1** is a high-voltage MOSFET designed for switching applications in power supplies, motor control, and inverters.
- It features **low on-resistance** and **fast switching** characteristics, making it suitable for high-efficiency power conversion.
- The device is **avalanche rugged**, ensuring reliability in harsh conditions.
### **Features:**
- **High voltage capability (600V)**
- **Low gate charge** for fast switching
- **Low RDS(on)** for reduced conduction losses
- **Avalanche energy specified** for robustness
- **100% avalanche tested** for reliability
- **Lead-free and RoHS compliant**
This information is strictly based on the manufacturer's datasheet. For detailed application guidelines, refer to STMicroelectronics' official documentation.
