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STB20NK50Z-S from ST,ST Microelectronics

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STB20NK50Z-S

Manufacturer: ST

N-CHANNEL 500V

Partnumber Manufacturer Quantity Availability
STB20NK50Z-S,STB20NK50ZS ST 4800 In Stock

Description and Introduction

N-CHANNEL 500V The STB20NK50Z-S is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 20A  
- **Pulsed Drain Current (IDM):** 80A  
- **Power Dissipation (PD):** 170W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.19Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 2000pF (typ)  
- **Output Capacitance (Coss):** 300pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Turn-On Delay Time (td(on)):** 12ns (typ)  
- **Turn-Off Delay Time (td(off)):** 50ns (typ)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  
- **Package:** TO-263 (D²PAK)  

### **Description:**  
The STB20NK50Z-S is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It features low on-resistance and high current capability, making it suitable for power supplies, motor control, and other industrial applications.  

### **Features:**  
- **High Voltage Rating (500V)**  
- **Low On-Resistance (0.19Ω max)**  
- **Fast Switching Performance**  
- **Avalanche Energy Specified**  
- **100% Avalanche Tested**  
- **Low Gate Charge**  
- **Improved dv/dt Capability**  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-CHANNEL 500V

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