N-CHANNEL 600V The STB13NK60Z is an N-channel Power MOSFET manufactured by STMicroelectronics.
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 13A
- **Pulsed Drain Current (IDM):** 52A
- **Power Dissipation (Ptot):** 190W
- **Gate-Source Voltage (VGS):** ±30V
- **On-State Resistance (RDS(on)):** 0.35Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 1500pF (typ)
- **Output Capacitance (Coss):** 180pF (typ)
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 55ns (typ)
- **Operating Temperature Range:** -55°C to 150°C
- **Package:** TO-263 (D2PAK)
### **Descriptions and Features:**
- **High Voltage Capability:** Suitable for applications requiring up to 600V.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-frequency switching applications.
- **Avalanche Ruggedness:** Enhanced reliability under high-energy conditions.
- **Zener-Protected Gate:** Provides additional protection against voltage spikes.
- **Applications:** Used in power supplies, motor control, lighting, and other high-voltage switching circuits.
This information is based on STMicroelectronics' official datasheet for the STB13NK60Z.
