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STB120NF10T4 from ST,ST Microelectronics

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STB120NF10T4

Manufacturer: ST

N-CHANNEL 100V

Partnumber Manufacturer Quantity Availability
STB120NF10T4 ST 3600 In Stock

Description and Introduction

N-CHANNEL 100V The STB120NF10T4 is a power MOSFET manufactured by STMicroelectronics. Below are the factual details about the device:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 120A  
- **Pulsed Drain Current (IDM):** 480A  
- **Power Dissipation (PD):** 300W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 170nC (typical)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Package:** TO-263 (D²PAK)  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Avalanche ruggedness for improved reliability.  
- Suitable for automotive and industrial applications.  
- Lead-free and RoHS compliant.  

The STB120NF10T4 is commonly used in power supplies, motor control, DC-DC converters, and other high-current switching applications.

Application Scenarios & Design Considerations

N-CHANNEL 100V
Partnumber Manufacturer Quantity Availability
STB120NF10T4 STMICROELECT 4826 In Stock

Description and Introduction

N-CHANNEL 100V The STB120NF10T4 is a power MOSFET manufactured by STMicroelectronics. Here are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** STMicroelectronics  
- **Part Number:** STB120NF10T4  
- **Type:** N-Channel Power MOSFET  
- **Technology:** MDmesh™ II  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 120A  
- **Pulsed Drain Current (IDM):** 480A  
- **Power Dissipation (PD):** 300W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Gate Charge (Qg):** 110nC (typ)  
- **Input Capacitance (Ciss):** 5800pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-263 (D²PAK)  

### **Descriptions:**  
- The STB120NF10T4 is a high-performance N-Channel MOSFET designed for high-current, high-efficiency power switching applications.  
- It utilizes STMicroelectronics' MDmesh™ II technology, which provides low on-resistance and high switching performance.  
- Suitable for applications such as DC-DC converters, motor control, and power management in industrial and automotive systems.  

### **Features:**  
- **Low RDS(on):** Ensures minimal conduction losses.  
- **High Current Capability:** Supports up to 120A continuous drain current.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Rugged:** Enhanced reliability under harsh conditions.  
- **Low Gate Charge:** Reduces switching losses.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-CHANNEL 100V

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