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STB120NF10 from ST,ST Microelectronics

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STB120NF10

Manufacturer: ST

N-CHANNEL 100V

Partnumber Manufacturer Quantity Availability
STB120NF10 ST 40000 In Stock

Description and Introduction

N-CHANNEL 100V The STB120NF10 is a power MOSFET manufactured by STMicroelectronics. Here are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 120A  
- **Pulsed Drain Current (IDM):** 480A  
- **Power Dissipation (PD):** 300W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 7.5mΩ (max) @ VGS = 10V  
- **Gate Charge (Qg):** 150nC (typ)  
- **Input Capacitance (Ciss):** 5200pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The STB120NF10 is an N-channel power MOSFET designed for high-current, high-efficiency switching applications. It is optimized for low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- **Low RDS(on):** Ensures minimal conduction losses.  
- **High Current Capability:** Supports up to 120A continuous current.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Ruggedness:** Enhanced reliability under harsh conditions.  
- **TO-263 (D2PAK) Package:** Provides efficient thermal performance.  

This information is sourced from STMicroelectronics' official documentation.

Application Scenarios & Design Considerations

N-CHANNEL 100V

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