N-CHANNEL 500V The STB11NK50Z is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on the available knowledge base:
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 11A
- **Pulsed Drain Current (IDM):** 44A
- **Power Dissipation (PD):** 150W
- **Gate-Source Voltage (VGS):** ±30V
- **On-State Resistance (RDS(on)):** 0.45Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 1000pF (typical)
- **Output Capacitance (Coss):** 150pF (typical)
- **Reverse Transfer Capacitance (Crss):** 30pF (typical)
- **Turn-On Delay Time (td(on)):** 10ns (typical)
- **Turn-Off Delay Time (td(off)):** 50ns (typical)
- **Operating Junction Temperature (TJ):** -55°C to 150°C
### **Description:**
The STB11NK50Z is a high-voltage N-channel MOSFET designed for power switching applications. It is optimized for high efficiency and fast switching performance, making it suitable for switch-mode power supplies (SMPS), motor control, and other power management applications.
### **Features:**
- **High Voltage Capability:** 500V breakdown voltage for robust performance.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-frequency applications.
- **Avalanche Rugged:** Ensures reliability under inductive load conditions.
- **TO-263 (D2PAK) Package:** Provides efficient thermal performance.
- **100% Avalanche Tested:** Guarantees ruggedness in harsh conditions.
This information is strictly based on the manufacturer's datasheet and technical specifications.
