N-CHANNEL 500V The STB10NB50 is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 10A
- **Pulsed Drain Current (IDM):** 40A
- **Power Dissipation (PD):** 150W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min) to 5V (max)
- **Input Capacitance (Ciss):** 800pF (typ)
- **Output Capacitance (Coss):** 120pF (typ)
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)
- **Turn-On Delay Time (td(on)):** 15ns (typ)
- **Turn-Off Delay Time (td(off)):** 60ns (typ)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
### **Description:**
The STB10NB50 is a high-voltage N-channel MOSFET designed for high-efficiency power switching applications. It is built using STMicroelectronics' advanced PowerMESH™ technology, which ensures low on-resistance and high switching performance.
### **Features:**
- **High Voltage Capability:** 500V breakdown voltage.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-frequency applications.
- **Avalanche Ruggedness:** Enhanced reliability under high-energy conditions.
- **Low Gate Charge:** Improves switching efficiency.
- **100% Avalanche Tested:** Ensures robustness in harsh conditions.
- **TO-263 (D²PAK) Package:** Provides efficient thermal dissipation.
This information is based on the manufacturer's datasheet and technical documentation.
