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ST-1KL3A from KODENSHI

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ST-1KL3A

Manufacturer: KODENSHI

Photo transistors(high-sensitivity NPN silicon phototransistors mounted in durable)

Partnumber Manufacturer Quantity Availability
ST-1KL3A,ST1KL3A KODENSHI 10000 In Stock

Description and Introduction

Photo transistors(high-sensitivity NPN silicon phototransistors mounted in durable) The ST-1KL3A is a phototransistor manufactured by KODENSHI. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Type:** Phototransistor  
- **Package:** Through-hole (likely in a standard 3mm or 5mm package)  
- **Spectral Response Range:** Typically in the visible to near-infrared range (exact values depend on datasheet)  
- **Collector-Emitter Voltage (VCEO):** Typically around 30V (confirm with datasheet)  
- **Collector Current (IC):** Maximum current handling capacity (exact value depends on datasheet)  
- **Dark Current (ID):** Low leakage current in the absence of light (specific value depends on datasheet)  
- **Operating Temperature Range:** Standard range (e.g., -25°C to +85°C, confirm with datasheet)  

### **Descriptions:**  
- The ST-1KL3A is a light-sensitive transistor that converts light intensity into an electrical signal.  
- It is commonly used in optoelectronic applications such as light detection, encoders, and optical switches.  
- The device operates by allowing light to trigger current flow between its collector and emitter terminals.  

### **Features:**  
- **High Sensitivity:** Responds effectively to light in its spectral range.  
- **Fast Response Time:** Suitable for applications requiring quick detection.  
- **Low Dark Current:** Minimal leakage when not exposed to light.  
- **Reliable Performance:** Designed for stable operation in various environments.  

For exact electrical characteristics, mechanical dimensions, and application-specific details, refer to the official KODENSHI datasheet.

Application Scenarios & Design Considerations

Photo transistors(high-sensitivity NPN silicon phototransistors mounted in durable)

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