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ST-1CL3H from KODENSHI

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ST-1CL3H

Manufacturer: KODENSHI

Photo transistors(high sensitivity NPN silicon phototransistor mounted)

Partnumber Manufacturer Quantity Availability
ST-1CL3H,ST1CL3H KODENSHI 10000 In Stock

Description and Introduction

Photo transistors(high sensitivity NPN silicon phototransistor mounted) The ST-1CL3H is a phototransistor manufactured by KODENSHI. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** Phototransistor  
- **Package:** Through-hole (3mm diameter)  
- **Peak Wavelength (λp):** 940 nm  
- **Collector-Emitter Voltage (VCEO):** 30 V  
- **Emitter-Collector Voltage (VECO):** 5 V  
- **Collector Current (IC):** 20 mA  
- **Power Dissipation (P):** 75 mW  
- **Operating Temperature Range:** -25°C to +85°C  
- **Storage Temperature Range:** -40°C to +100°C  

### **Descriptions:**  
- The ST-1CL3H is a high-sensitivity phototransistor designed for infrared light detection.  
- It operates optimally at a wavelength of 940 nm, making it suitable for IR remote control and optical sensing applications.  
- The device is encased in a clear epoxy package for efficient light reception.  

### **Features:**  
- High photosensitivity for infrared light.  
- Fast response time.  
- Compact and easy-to-mount through-hole design.  
- Reliable performance in various environmental conditions.  

This information is strictly based on the manufacturer's provided data.

Application Scenarios & Design Considerations

Photo transistors(high sensitivity NPN silicon phototransistor mounted)

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