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SSM3K03FE from TOSHIBA

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SSM3K03FE

Manufacturer: TOSHIBA

Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications

Partnumber Manufacturer Quantity Availability
SSM3K03FE TOSHIBA 385200 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Applications     2.5 V gate drive  High input impedance  Low gate threshold voltage: V = 0.7~1.3 V th Small package  Maximum Ratings  (Ta  25°C)Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSGate-source voltage V 10 V GSSDC drain current I 100 mA DDrain power dissipation P 100 mW D  Channel temperature T 150 °C ch JEDEC ― Storage temperature range T 55~150 °C  stg JEITA ―  TOSHIBA 2-2HA1B Weight: 2.3 mg (typ.) Marking  Equivalent Circuit     1 2003-03-27 SSM3K03FE

Application Scenarios & Design Considerations

Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications

Alternative Part Number

  • 2SK3018 --: N-channel small-signal MOSFET in SOT-323/UMT3 package with comparable Vds and current ratings, widely used as a direct substitute for SSM3K03FE in switching applications.
  • BSS138 --: Popular N-channel logic-level MOSFET in SOT-23 with similar voltage and current characteristics, easy to source and commonly used as a functional replacement.
  • 2N7002 --: Industry-standard N-channel MOSFET in SOT-23 with comparable ratings, very widely available and suitable for low-power switching where SSM3K03FE is used.

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