SSM3J113TUManufacturer: TOSHIBA Small-signal MOSFET | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| SSM3J113TU | TOSHIBA | 3000 | In Stock |
Description and Introduction
Small-signal MOSFET Absolute Maximum Ratings (Ta = 25°C) 1Characteristic Symbol Rating Unit 32Drain-Source voltage V −20 V DS Gate-Source voltage V ± 12 V GSS DC I −1.7 D Drain current A Pulse I −3.4 DP P 800 D (Note 1) Drain power dissipation mW P 500 D (Note 2) Channel temperature T 150 °C  ch1: Gate Storage temperature range T −55 to 150 °C stg 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in UFM temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC ―
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Application Scenarios & Design Considerations
Small-signal MOSFET
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