Audio Dual Natched NPN transistor CHARACTERISTICS at Vcs = 15V, -4(y'C 5 T, 3 +85°C, unless otherwise noted.
SSM-2210
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I =1mA (Note1) 300 - -
CurrentGain hFE I = 10PA 200 - -
Offset Volta e V V03 = 0 - 220 V
g OS IC = 1mA [l
Average Offset TCV les. IC s1mA,0 s Va, s VMAX (Note 2) - 0.08 1 uV/°C
Voltage ant os Vos Trimmed to Zero (Note 3) - 0.03 0.3
Input Bias Current r, IC = 10M - - 50 nA
Input Offset Current los IC = 10PA - - 13 nA
Input Offset a
Current ant TCIOS IC = 10pA (Note 4) - 40 150 {W C
Collector-Base
Leakage Current ICBO Vas - VMAX - 3 _ nA
Collector-emitter
l V = V ' V = - -
Leakage Current CES CE MAX BE 0 4 nA
collector-Collector I V - V _ 4 n A
Leakage Current CC CC - MAX
NOTES:
1. Current gain is guaranteed with Collector-Base Voltage (VCB) swept from 0 to
VMAX at the indicated collector current.
V
2. Guaranteed by Vos test (chOS = -i-?-s-a v85). T = 298K for T A = 25°C.
3. The initial zeco offset voltage is established by adjusting the ratio oflc, to lc2 at
T, = 25°C. This ratio must be held to 0.003% over the entire temperature range.
Measurements are taken at the temperature extremes and 25°C.
4. Guaranteed by design.
TYPICAL PERFORMANCE
