600V N-Channel MOSFET The SSH7N60B is a power MOSFET manufactured by Vishay Siliconix. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 600 V
- **Continuous Drain Current (ID):** 7 A
- **Pulsed Drain Current (IDM):** 28 A
- **Power Dissipation (PD):** 125 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-Resistance (RDS(on)):** 1 Ω (max) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 3 V (min), 5 V (max)
- **Input Capacitance (Ciss):** 500 pF (typ)
- **Output Capacitance (Coss):** 100 pF (typ)
- **Reverse Transfer Capacitance (Crss):** 20 pF (typ)
- **Turn-On Delay Time (td(on)):** 10 ns (typ)
- **Turn-Off Delay Time (td(off)):** 60 ns (typ)
- **Operating Temperature Range:** -55 °C to +150 °C
### **Description:**
The SSH7N60B is an N-channel power MOSFET designed for high-voltage switching applications. It features low on-resistance, fast switching speeds, and high ruggedness, making it suitable for power supplies, motor control, and inverters.
### **Features:**
- **High Voltage Capability:** 600 V drain-source voltage rating
- **Low On-Resistance:** Minimizes conduction losses
- **Fast Switching:** Optimized for high-frequency applications
- **Avalanche Energy Rated:** Enhanced reliability under inductive loads
- **Improved dv/dt Capability:** Reduces spurious turn-on risks
- **TO-220AB Package:** Standard through-hole mounting
This information is based solely on the manufacturer's datasheet.
