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SS32B from MIC

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SS32B

Manufacturer: MIC

Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 150 V Forward Current 3.0 A

Partnumber Manufacturer Quantity Availability
SS32B MIC 18000 In Stock

Description and Introduction

Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 150 V Forward Current 3.0 A The SS32B is a Schottky diode manufactured by MIC (Micro Commercial Components). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Type:** Schottky Barrier Rectifier Diode  
- **Maximum Average Forward Current (IF(AV)):** 3A  
- **Peak Forward Surge Current (IFSM):** 80A  
- **Maximum Reverse Voltage (VR):** 20V  
- **Forward Voltage Drop (VF):** 0.5V (at 3A)  
- **Reverse Leakage Current (IR):** 0.5mA (at 20V)  
- **Operating Temperature Range:** -65°C to +125°C  
- **Package:** DO-214AA (SMB)  

### **Descriptions:**
- The SS32B is a high-efficiency Schottky diode designed for low-power loss and high-frequency switching applications.  
- It is commonly used in power supply circuits, reverse polarity protection, and DC-DC converters.  

### **Features:**
- Low forward voltage drop for reduced power loss.  
- High current capability with low thermal resistance.  
- Fast switching performance for high-frequency applications.  
- Lead-free and RoHS compliant.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 150 V Forward Current 3.0 A
Partnumber Manufacturer Quantity Availability
SS32B TOSHIBA 15000 In Stock

Description and Introduction

Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 150 V Forward Current 3.0 A The SS32B is a Schottky barrier diode manufactured by Toshiba. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Type:** Schottky Barrier Diode  
- **Maximum Average Forward Current (IF(AV)):** 3A  
- **Peak Forward Surge Current (IFSM):** 80A  
- **Maximum Reverse Voltage (VR):** 20V  
- **Forward Voltage Drop (VF):** 0.5V (typical at 3A)  
- **Reverse Leakage Current (IR):** 0.5mA (maximum at VR = 20V)  
- **Operating Junction Temperature (Tj):** -65°C to +125°C  
- **Storage Temperature Range (Tstg):** -65°C to +150°C  

### **Descriptions:**
- The SS32B is a high-efficiency Schottky diode designed for low-voltage, high-frequency applications.  
- It is commonly used in power rectification, switching power supplies, and reverse polarity protection circuits.  
- The diode features a low forward voltage drop, reducing power loss and improving efficiency.  

### **Features:**
- **Low Forward Voltage Drop:** Enhances energy efficiency.  
- **High Surge Current Capability:** Suitable for transient conditions.  
- **Fast Switching Speed:** Ideal for high-frequency applications.  
- **Lead-Free and RoHS Compliant:** Environmentally friendly.  

For detailed mechanical and packaging information, refer to Toshiba’s official datasheet.

Application Scenarios & Design Considerations

Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 150 V Forward Current 3.0 A

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