for lowest Conduction Losses & fastest Switching **Manufacturer:** Infineon
**Part Number:** SPW21N50C3
### **Specifications:**
- **Transistor Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDS):** 500 V
- **Continuous Drain Current (ID):** 21 A
- **Pulsed Drain Current (IDM):** 84 A
- **Power Dissipation (Ptot):** 230 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-State Resistance (RDS(on)):** 0.19 Ω (max) at VGS = 10 V
- **Total Gate Charge (Qg):** 60 nC (typical)
- **Threshold Voltage (VGS(th)):** 3.5 V (typical)
- **Operating Junction Temperature (Tj):** -55°C to +150°C
- **Package:** TO-247
### **Descriptions:**
The SPW21N50C3 is a high-voltage N-Channel Power MOSFET designed for high-efficiency switching applications. It features low on-state resistance and fast switching performance, making it suitable for power supplies, motor control, and industrial applications.
### **Features:**
- **Optimized for High Efficiency:** Low RDS(on) minimizes conduction losses.
- **Fast Switching:** Low gate charge and low capacitance enhance switching performance.
- **High Current Capability:** Supports high continuous and pulsed drain currents.
- **Robust Design:** Avalanche energy specified for ruggedness in harsh conditions.
- **Lead-Free & RoHS Compliant:** Environmentally friendly manufacturing.
(Data sourced from Infineon’s official documentation.)
