TO220/262/263; 80 A; 55V; NL; 8 mOhm Here are the factual details about the **SPP80N06S-08** MOSFET from **Infineon**:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** SPP80N06S-08
- **Type:** N-Channel Power MOSFET
- **Technology:** OptiMOS™
- **Drain-Source Voltage (VDS):** 60V
- **Continuous Drain Current (ID):** 80A
- **Pulsed Drain Current (IDM):** 320A
- **Power Dissipation (PD):** 200W
- **RDS(on) (Max) at VGS = 10V:** 8mΩ
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (VGS(th)):** 2V (typical)
- **Total Gate Charge (Qg):** 60nC (typical)
- **Operating Junction Temperature (TJ):** -55°C to +175°C
- **Package:** TO-263 (D2PAK)
### **Descriptions:**
- The **SPP80N06S-08** is a **60V N-Channel MOSFET** designed for high-efficiency power switching applications.
- It is part of Infineon’s **OptiMOS™** family, optimized for **low conduction losses** and **fast switching performance**.
- Suitable for **DC-DC converters, motor control, and power management** applications.
### **Features:**
- **Low on-state resistance (RDS(on))** for reduced conduction losses.
- **High current capability** (80A continuous, 320A pulsed).
- **Fast switching speed** for improved efficiency.
- **Avalanche ruggedness** for reliable operation in harsh conditions.
- **Lead-free and RoHS-compliant** packaging.
For further details, refer to the official **Infineon datasheet**.
