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SPP30N03L from INFINEON

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SPP30N03L

Manufacturer: INFINEON

N-Channel SIPMOS Power Transistor

Partnumber Manufacturer Quantity Availability
SPP30N03L INFINEON 10000 In Stock

Description and Introduction

N-Channel SIPMOS Power Transistor The SPP30N03L is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 48W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.025Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 3V  
- **Total Gate Charge (Qg):** 25nC (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**
The SPP30N03L is an N-channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, motor control, and power management circuits.

### **Features:**
- Low on-resistance (RDS(on)) for reduced conduction losses  
- Fast switching performance  
- High current handling capability  
- Avalanche ruggedness  
- Lead-free and RoHS compliant  
- TO-252 (DPAK) package  

This information is based on Infineon's datasheet for the SPP30N03L MOSFET.

Application Scenarios & Design Considerations

N-Channel SIPMOS Power Transistor
Partnumber Manufacturer Quantity Availability
SPP30N03L SIEMENS 500 In Stock

Description and Introduction

N-Channel SIPMOS Power Transistor The **SPP30N03L** is a power MOSFET manufactured by **SIEMENS**. Below are its key specifications, descriptions, and features based on available factual information:  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.03Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1-2V  
- **Input Capacitance (Ciss):** 1000pF (typical)  
- **Package:** TO-220  

### **Descriptions:**  
- Designed for high-efficiency power switching applications.  
- Suitable for low-voltage, high-current applications such as motor control, power supplies, and DC-DC converters.  
- Features low on-resistance for reduced conduction losses.  

### **Features:**  
- **Low RDS(on):** Enhances efficiency in power switching.  
- **Fast Switching Speed:** Improves performance in high-frequency applications.  
- **Avalanche Energy Rated:** Ensures robustness in inductive load conditions.  
- **TO-220 Package:** Provides good thermal dissipation.  

This information is based on the manufacturer's datasheet and technical documentation. For detailed electrical characteristics and application notes, refer to the official SIEMENS datasheet.

Application Scenarios & Design Considerations

N-Channel SIPMOS Power Transistor

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