for lowest Conduction Losses & fastest Switching **Manufacturer:** Infineon
**Part Number:** SPP20N60CFD
### **Specifications:**
- **Transistor Type:** N-Channel MOSFET
- **Technology:** CoolMOS™ C7
- **Drain-Source Voltage (VDS):** 650 V
- **Continuous Drain Current (ID):** 20 A (at 25°C)
- **Pulsed Drain Current (IDM):** 80 A
- **Power Dissipation (Ptot):** 230 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-State Resistance (RDS(on)):** 0.19 Ω (max at VGS = 10 V)
- **Input Capacitance (Ciss):** 1800 pF (typical)
- **Output Capacitance (Coss):** 150 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 30 pF (typical)
- **Turn-On Delay Time (td(on)):** 10 ns (typical)
- **Turn-Off Delay Time (td(off)):** 60 ns (typical)
- **Operating Junction Temperature (Tj):** -55°C to +150°C
- **Package:** TO-220FP (isolated)
### **Descriptions:**
The SPP20N60CFD is a high-voltage N-channel MOSFET from Infineon's CoolMOS™ C7 series, designed for high-efficiency power conversion applications. It features low on-state resistance and fast switching performance, making it suitable for switch-mode power supplies (SMPS), lighting, and industrial applications.
### **Features:**
- **High Voltage Capability:** 650 V breakdown voltage
- **Low RDS(on):** Optimized conduction losses
- **Fast Switching:** Improved efficiency in high-frequency applications
- **CoolMOS™ C7 Technology:** Enhanced thermal performance and reliability
- **Isolated Package (TO-220FP):** Provides electrical isolation for improved safety
- **Avalanche-Rugged:** High energy capability for robustness in harsh conditions
- **Pb-Free & RoHS Compliant:** Environmentally friendly
(All data is based on Infineon's official datasheet.)
