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SPP11N60C3 from ST,ST Microelectronics

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SPP11N60C3

Manufacturer: ST

for lowest Conduction Losses & fastest Switching

Partnumber Manufacturer Quantity Availability
SPP11N60C3 ST 1500 In Stock

Description and Introduction

for lowest Conduction Losses & fastest Switching The **SPP11N60C3** is a power MOSFET manufactured by **STMicroelectronics (ST)**. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 600 V  
- **Continuous Drain Current (ID):** 11 A  
- **Pulsed Drain Current (IDM):** 44 A  
- **Power Dissipation (Ptot):** 190 W  
- **Gate-Source Voltage (VGS):** ±30 V  
- **On-Resistance (RDS(on)):** 0.38 Ω (max) at VGS = 10 V  
- **Threshold Voltage (VGS(th)):** 3 V (min), 5 V (max)  
- **Input Capacitance (Ciss):** 1200 pF  
- **Output Capacitance (Coss):** 200 pF  
- **Reverse Transfer Capacitance (Crss):** 30 pF  
- **Turn-On Delay Time (td(on)):** 10 ns  
- **Turn-Off Delay Time (td(off)):** 60 ns  
- **Operating Temperature Range:** -55°C to 150°C  
- **Package:** TO-220  

### **Descriptions:**
- The **SPP11N60C3** is an **N-channel** power MOSFET designed for high-voltage, high-speed switching applications.  
- It is optimized for **low gate charge** and **low on-resistance**, making it suitable for **efficient power conversion**.  
- The device is **avalanche-rated**, ensuring robustness in harsh conditions.  

### **Features:**
- **High voltage capability (600 V)**  
- **Low gate charge for fast switching**  
- **Low on-resistance for reduced conduction losses**  
- **Avalanche ruggedness for reliability**  
- **100% avalanche tested**  
- **Improved dv/dt capability**  
- **Suitable for SMPS, motor control, and lighting applications**  

This MOSFET is commonly used in **switched-mode power supplies (SMPS), inverters, motor drives, and industrial applications**.

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